+1 vote
in Linear Integrated Circuits by (37.1k points)
In which method shallow penetration of dopants is possible?

(a) Ion implantation

(b) Vertical diffusion

(c) Horizontal diffusion

(d) Dopants diffusion

I got this question in my homework.

I need to ask this question from Basic Planar Process in division IC Fabrication of Linear Integrated Circuits

1 Answer

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by (39.8k points)
Accurate answer is (a) Ion implantation

Let me simplify it: The depth of diffusion in this method, can be easily regulated by control of the incident ion velocity and is capable of shallow penetration.

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