Question

In ion implantation method, penetrating the ions into the silicon wafer depends upon

(a) Accelerating voltage

(b) Accelerating speed

(c) Accelerating current

(d) All of the mentioned

I had been asked this question in unit test.

This question is from Basic Planar Process in portion IC Fabrication of Linear Integrated Circuits

Answer 1

Right answer is (a) Accelerating voltage

Expand on the concept with: The depth of penetration of any  particular type of ion increases with increasing accelerating voltage.