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At what temperature should the oxidation process be carried out to get an oxide film of thickness 0.02 to 2µm?

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+1 vote
in Linear Integrated Circuits by (37.1k points)
At what temperature should the oxidation process be carried out to get an oxide film of thickness 0.02 to 2µm?

(a) 0-105^oc

(b) 950-1115^oc

(c) 200-850^oc

(d) 350-900^oc

This question was addressed to me in a job interview.

The doubt is from Basic Planar Process in division IC Fabrication of Linear Integrated Circuits

1 Answer

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by (39.8k points)
Right choice is (b) 950-1115^oc

Explore the finest explanation: Silicon wafers are raised to a high temperature in the range 950-1115^oc and are exposed to gas. The thickness of layer is governed by time, temperature and its moisture content.

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