Question

Which method is most suitable for silicon crystal growth in silicon wafer preparation?

(a) Float zone process

(b) Bridgeman-Stockbarger method

(c) Czochralski crystal growth process

(d) Laser heated pedestal growth

I have been asked this question during an interview.

My question is based upon Basic Planar Process topic in portion IC Fabrication of Linear Integrated Circuits

Answer 1

Accurate option is (c) Czochralski crystal growth process

Delve into insight with: Czochralski crystal growth processes obtain single crystal of semiconductor. The most important application of this method may be growth of large cylindrical ingot of single crystal silicon.