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Which component is added to the p-type material in order to get the impurity concentration in epitaxial films?

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in Linear Integrated Circuits by (38.2k points)
Which component is added to the p-type material in order to get the impurity concentration in epitaxial films?

(a) Bi-borane (B2H2)

(b) Phosphine (PH3)

(c) Boron chloride (BCl3)

(d) Phosphorous pentoxide (P2O5)

The question was posed to me in homework.

Question is from Basic Planar Process in chapter IC Fabrication of Linear Integrated Circuits

1 Answer

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by (39.8k points)
The correct option is (a) Bi-borane (B2H2)

Unlock profound understanding with: Bi-Borane is used for doping p-type materials and Phosphine is used for doping n-type materials whereas Boron chloride and Phosphorous pentoxide are used for doping during diffusion process.

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