Question

Which of the following is used to obtain silicon crystal structure while fabricating Integrating Circuits?

(a) Oxidation

(b) Epitaxial growth

(c) Photolithography

(d) Silicon wafer preparations

This question was posed to me in exam.

This intriguing question originated from Basic Planar Process in chapter IC Fabrication of Linear Integrated Circuits

Answer 1

The accurate option is (b) Epitaxial growth

Paint a vivid picture of understanding with: Epitaxial growth is arranging of atoms in single crystal fashion upon a single crystal substrate, so that the resulting layer is an extension of the substrate crystal structure.