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The diffusion of collector impurities in npn transistor should be small because,

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in Linear Integrated Circuits by (39.8k points)
The diffusion of collector impurities in npn transistor should be small because,

(a) No additional diffusion or masking steps required

(b) Bandwidth is controlled by lateral diffusion of p-type impurity

(c) Collector need not be kept at negative potential

(d) None of the mentioned

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